Gallium antimonide substrases, diam. × thickness 50.5 mm. × 500 μm
- CAS
- 12064-03-8
- Formula
- GaSb
- MW
- 191.48 g/mol
VQ-015212
Gallium antimonide wafers, n-type, diam. × thickness 76.2 mm × 625 mm
- CAS
- 12064-03-8
- Formula
- GaSb
- MW
- 191.48 g/mol
VQ-015213
Gallium arsenide (GaAs substrate), (undoped, 10 x 10 x 0.5 mm)
- CAS
- 1303-00-0
- Formula
- AsGa
- MW
- 144.65 g/mol
VQ-018017
Gallium arsenide (GaAs substrate), diam. × thickness 2" (50.8 mm) × 0.35 mm
- CAS
- 1303-00-0
- Formula
- AsGa
- MW
- 144.65 g/mol
VQ-018018
Gallium arsenide (single crystal substrate), (100) ± 0.5o
- CAS
- 1303-00-0
- Formula
- AsGa
- MW
- 144.65 g/mol
VQ-018019
Gallium arsenide (single crystal substrate), (111)B ± 0.5o
- CAS
- 1303-00-0
- Formula
- AsGa
- MW
- 144.65 g/mol
VQ-018020
Gallium arsenide wafers, diam. × thickness 76.2 mm × 625 mm
- CAS
- 1303-00-0
- Formula
- AsGa
- MW
- 144.65 g/mol
VQ-018021
Gallium arsenide wafers, N-TYPE, dia 76.2 mm, thick 500 µm
- CAS
- 1303-00-0
- Formula
- AsGa
- MW
- 144.65 g/mol
VQ-018022
Gallium arsenide wafers, p-TYPE, dia 76.2mm, thick 500 µm
- CAS
- 1303-00-0
- Formula
- AsGa
- MW
- 144.65 g/mol
VQ-018023
Gallium oxide, single crystal substrates, 10 mm x 10 mm x 0.6 mm
- CAS
- 12024-21-4
- Formula
- Ga2O3
- MW
- 187.44 g/mol
VQ-018272
Gallium phosphide wafers, diam. x thickness 50.8mm. x 0.25 - 0.55 mm
- CAS
- 12063-98-8
- Formula
- GaP
- MW
- 100.7 g/mol
VQ-018178
Gallium phosphide wafers, diam. x thickness 50.8mm. x 0.45 mm
- CAS
- 12063-98-8
- Formula
- GaP
- MW
- 100.7 g/mol
VQ-018179
Gallium(II) chloride, ultra dry 99.999% (metals basis)
- CAS
- 13498-12-9
- Formula
- Cl4Ga2
- MW
- 281.3 g/mol
VQ-015221
Gallium(III) 2,4-pentanedionate, 99.99%
- CAS
- 14405-43-7
- Formula
- [CH3COCH=C(O-)CH3]3Ga
- MW
- 367.05 g/mol
VQ-015223