Silicon carbide (4H-SiC) wafers, dia 76.2 mm,… 409-21-2

Name: Silicon carbide (4H-SiC) wafers, dia 76.2 mm, thick 0.35 mm
Brand: Vaqora Chemicals
SKU: VQ-018297

About Silicon carbide (4H-SiC) wafers, dia 76.2 mm, thick 0.35 mm

Silicon carbide (4H-SiC) wafers, dia 76.2 mm, thick 0.35 mm is a single crystal substrate carrying the CAS registry number 409-21-2. Formula CSi, molecular weight 40.1 g/mol. Its systematic (IUPAC) name is methanidylidynesilanylium. Common synonyms include SiC Substrates and Silicon Carbide single crystal substrate.

The product is provided as a solid. Keep the container tightly sealed and store it in a cool, dry area. The GHS classification uses the signal word “Danger”, so appropriate gloves, eye protection and ventilation are recommended.

Typical applications include epitaxial thin-film growth, semiconductor research and substrate for devices. It is used across academic and industrial research and electronics and semiconductors.

We offer Silicon carbide (4H-SiC) wafers, dia 76.2 mm, thick 0.35 mm in 1 pc and 10 pc packs with a batch-specific COA, and ship to customers worldwide.

Typical applications

Epitaxial thin-film growth
Semiconductor research
Substrate for devices

Industries

Specifications & identifiers

Chemical identifiers
Product name	Silicon carbide (4H-SiC) wafers, dia 76.2 mm, thick 0.35 mm
Catalogue No.	VQ-018297
CAS Number	409-21-2
IUPAC name	methanidylidynesilanylium
Molecular formula	CSi
Molecular weight	40.1 g/mol
Exact mass	39.9769
HSN code	9001
InChIKey	HBMJWWWQQXIZIP-UHFFFAOYSA-N
SMILES	[C-]#[Si+]
PubChem CID	9863

Physical properties
Physical form	Solid
H-bond donors / acceptors	0 / 1
TPSA	0 Å²
Synonyms	SiC Substrates, Silicon Carbide single crystal substrate, Silicon monocarbide, Silicon carbide (SiC), Carbon silicide, Green densic, Carbofrax M, Betarundum UF, Annanox CK, Betarundum ST-S, Crystolon 37, Crystolon 39

Safety & hazard information (GHS)

Health hazard

Signal word: Danger

Precautionary statements: P203, P280, P318, P405, P501

Classification is indicative (aggregated GHS notifications) and may vary by grade and concentration. Always refer to the SDS supplied with your lot.

Documents

Safety Data Sheet (SDS)16-section GHS · on request Certificate of AnalysisTypical / batch COA · on request Specification sheetTDS / MOA · on request

Other grades of CAS 409-21-2

Carborandum powder 16/240 Grit

CAS: 409-21-2
Formula: CSi
MW: 40.1 g/mol

VQ-018488

Carborandum powder 240/1200 Grit

CAS: 409-21-2
Formula: CSi
MW: 40.1 g/mol

VQ-018489

Silicon carbide (4H-SiC Epitaxial Wafer) wafers, dia 101 mm, thick 0.35 mm

CAS: 409-21-2
Formula: CSi
MW: 40.1 g/mol

VQ-018294

Silicon carbide (4H-SiC) wafers, dia 100 mm, thick 1.0 mm

CAS: 409-21-2
Formula: CSi
MW: 40.1 g/mol

VQ-018295

Silicon carbide (4H-SiC) wafers, dia 100 mm, thick 1.5 mm

CAS: 409-21-2
Formula: CSi
MW: 40.1 g/mol

VQ-018296

Silicon carbide (amorphous) nanopowder, APS 15 nm, 99%+

CAS: 409-21-2
Formula: CSi
MW: 40.1 g/mol

VQ-017622

Silicon carbide nanopowder (β), APS 10 nm, 97%+

CAS: 409-21-2
Formula: CSi
MW: 40.1 g/mol

VQ-017623

Silicon carbide nanopowder (β), APS 20-30 nm, 97%+

CAS: 409-21-2
Formula: CSi
MW: 40.1 g/mol

VQ-017624

All 21 products with CAS 409-21-2 →

Frequently asked questions

What is the CAS number of Silicon carbide (4H-SiC) wafers, dia 76.2 mm, thick 0.35 mm?

The CAS Registry Number of Silicon carbide (4H-SiC) wafers, dia 76.2 mm, thick 0.35 mm is 409-21-2. It is also known as SiC Substrates, Silicon Carbide single crystal substrate, Silicon monocarbide.

What is the molecular formula and molecular weight of Silicon carbide (4H-SiC) wafers, dia 76.2 mm, thick 0.35 mm?

Silicon carbide (4H-SiC) wafers, dia 76.2 mm, thick 0.35 mm has the molecular formula CSi and a molecular weight of 40.1 g/mol. Its IUPAC name is methanidylidynesilanylium.

Which grade and pack sizes of Silicon carbide (4H-SiC) wafers, dia 76.2 mm, thick 0.35 mm can I order?

We supply Silicon carbide (4H-SiC) wafers, dia 76.2 mm, thick 0.35 mm, in 1 pc, 10 pc packs. Larger bulk quantities and custom packing are quoted on request.

Do you provide a COA and SDS with Silicon carbide (4H-SiC) wafers, dia 76.2 mm, thick 0.35 mm?

Yes. Every lot of Silicon carbide (4H-SiC) wafers, dia 76.2 mm, thick 0.35 mm is shipped with a batch-specific Certificate of Analysis, and a 16-section GHS Safety Data Sheet is provided with the quotation and the shipment.

Can Silicon carbide (4H-SiC) wafers, dia 76.2 mm, thick 0.35 mm be shipped internationally?

Yes. Silicon carbide (4H-SiC) wafers, dia 76.2 mm, thick 0.35 mm is classified as hazardous, so it is packed in UN-approved packaging and shipped as dangerous goods under IATA/IMDG rules. We export worldwide on EXW, FOB, CIF and DAP terms.