Chemicals starting with “S”

2,289 products in alphabetical order with CAS numbers and molecular formulas.

A B C D E F G H I J K L M N O P Q R S T U V W X Y Z #

Silicon carbide nanopowder (β), APS 50-60 nm, 97.5%+

CAS: 409-21-2
Formula: CSi
MW: 40.1 g/mol

VQ-017627

Silicon carbide nanowhisker, 0.1-2.5 μm, beta, 99%+

CAS: 409-21-2
Formula: CSi
MW: 40.1 g/mol

VQ-017628

Silicon carbide sputtering target, diam. x thickness 1 inch × 3 mm, 99%

CAS: 409-21-2
Formula: CSi
MW: 40.1 g/mol

VQ-018408

Silicon carbide sputtering target, diam. x thickness 4 inch x 6 mm, 99.5%

CAS: 409-21-2
Formula: CSi
MW: 40.1 g/mol

VQ-017224

Silicon carbide substrates (N-Type SiC), dimensions. × thickness 10 x 10 mm × 0.3 mm

CAS: 409-21-2
Formula: CSi
MW: 40.1 g/mol

VQ-018298

Silicon carbide, 0.1 - 5 µm, 99.9%

CAS: 409-21-2
Formula: CSi
MW: 40.1 g/mol

VQ-018409

Silicon Dioxide Colloidal Hydrate Confirming to, IP

CAS: 63231-67-4

VQ-020395

Silicon dioxide granules, 1-3 mm, 99.99%

CAS: 14808-60-7
Formula: O₂Si
MW: 60.08 g/mol

VQ-017225

Silicon dioxide granules, 1-5 mm, 99.99%

CAS: 14808-60-7
Formula: O₂Si
MW: 60.08 g/mol

VQ-017226

Silicon dioxide pieces, dia 1-3 mm, 99.999%

CAS: 60676-86-0
Formula: O₂Si
MW: 60.08 g/mol

VQ-017227

Silicon dioxide sputtering target, diam. x thickness 304.8 mm x 10 mm, 99.99% elastomer bonding to Copper backing plate 304.8mm dia x 16 mm thick

CAS: 14808-60-7
Formula: O₂Si
MW: 60.08 g/mol

VQ-017228

Puriss

Silicon dioxide, -325 mesh, 99.5%

CAS: 60676-86-0
Formula: O₂Si
MW: 60.08 g/mol

VQ-015333

Silicon dioxide, -325 mesh, BP

CAS: 60676-86-0
Formula: O₂Si
MW: 60.08 g/mol

VQ-046630

Puriss

Silicon dioxide, ≥99.9%

CAS: 60676-86-0
Formula: O₂Si
MW: 60.08 g/mol

VQ-015338

Silicon dioxide, ≥99.99%

CAS: 60676-86-0
Formula: O₂Si
MW: 60.08 g/mol

VQ-015339

Silicon dioxide, 98%

CAS: 14808-60-7
Formula: O₂Si
MW: 60.08 g/mol

VQ-015334

Puriss

Silicon dioxide, 99.999%

CAS: 14808-60-7
Formula: O₂Si
MW: 60.08 g/mol

VQ-015336

Silicon dioxide, 99%

CAS: 14808-60-7
Formula: O₂Si
MW: 60.08 g/mol

VQ-015335

Silicon dioxide, acid washed and calcined

CAS: 14808-60-7
Formula: O₂Si
MW: 60.08 g/mol

VQ-015337

Silicon dioxide,acid purified, sand

CAS: 60676-86-0
Formula: O₂Si
MW: 60.08 g/mol

VQ-015340

Silicon granules 3-6 mm 99.99%

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-016875

Synthesis

Silicon high vacuum grease (lab)

Cat. No.: VQ-015341

VQ-015341

Silicon nanopowder, APS 130 nm, 99.5%

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-017373

Silicon Nanopowder, APS 20-30 nm, 98%+

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-017374

Silicon Nanopowder, APS 30-50 nm, 98%

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-017375

Silicon Nanopowder, APS 50-70 nm, 98%

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-017376

Silicon Nitride Nanopowder (β-phase), APS 2 μm, 99.9%

CAS: 12033-89-5
Formula: N₄Si₃
MW: 140.28 g/mol

VQ-017629

Silicon Nitride Nanopowder, APS 0.3-0.5 μm, 99.9%

CAS: 12033-89-5
Formula: N₄Si₃
MW: 140.28 g/mol

VQ-017630

Silicon Nitride Nanopowder, APS 0.3-0.5 μm, 99.99%

CAS: 12033-89-5
Formula: N₄Si₃
MW: 140.28 g/mol

VQ-017631

Silicon Nitride Nanopowder, APS 0.6-0.8 μm, 99.9%

CAS: 12033-89-5
Formula: N₄Si₃
MW: 140.28 g/mol

VQ-017632

Silicon Nitride Nanopowder, APS 0.8-1 μm, 99.9+%

CAS: 12033-89-5
Formula: N₄Si₃
MW: 140.28 g/mol

VQ-017633

Silicon nitride nanopowder, APS 2 μm, (α-phase) 99.9+%

CAS: 12033-89-5
Formula: N₄Si₃
MW: 140.28 g/mol

VQ-017634

Silicon Nitride, nanopowder, APS 15-30 nm, 98.5%+

CAS: 12033-89-5
Formula: N₄Si₃
MW: 140.28 g/mol

VQ-017635

Silicon oil, -40 to 200 °C

CAS: 63148-62-9
Formula: [-Si(CH₃)₂O-]n

VQ-015342

Silicon oil, for oil baths upto 250 °C

CAS: 63148-62-9
Formula: [-Si(CH₃)₂O-]n

VQ-015343

Silicon optical (mono crystalline) windows, 170 mm dia, 25 mm thick, 99.999%

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018093

Silicon optical (mono crystalline) windows, 25 mm dia, 3 mm thick, 99.999%

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018094

Silicon optical (mono crystalline) windows, 30 mm dia, 10 mm thick, 99.999%

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018095

Silicon optical (mono crystalline) windows, 30 mm dia, 15 mm thick, 99.999%

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018096

Silicon optical (mono crystalline) windows, 40 mm dia, 10 mm thick, 99.999%

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018097

Silicon optical (mono crystalline) windows, 90 mm dia, 15 mm thick, 99.999%

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018098

Silicon optical (mono crystalline) windows, 90 mm dia, 20 mm thick, 99.999%

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018099

Silicon optical, mono crystalline, windows, 90 mm dia, 10 mm thick, 99.999%

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018100

Silicon oxide dispersion (25 wt%, 30 nm) in water

Cat. No.: VQ-017636

VQ-017636

Silicon Oxide Dispersion (30 Wt%, 12-30 Nm) In 2-Propanol

Cat. No.: VQ-017637

VQ-017637

Silicon oxide nanopowder (quartz) 99.95%

CAS: 7631-86-9
Formula: O₂Si
MW: 60.08 g/mol

VQ-017511

Silicon oxide nanopowder, APS 15 nm, 99.5%

CAS: 7631-86-9
Formula: O₂Si
MW: 60.08 g/mol

VQ-017512

Silicon oxide nanopowder, APS 20 nm, 99.5%

CAS: 7631-86-9
Formula: O₂Si
MW: 60.08 g/mol

VQ-017513

Silicon oxide nanopowder, APS 80 nm, 99%

CAS: 7631-86-9
Formula: O₂Si
MW: 60.08 g/mol

VQ-017514

Silicon pieces, ≤10 mm, 99.9%

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-016879

Silicon pieces, 1-10 mm, 99.99999%

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-016876

Silicon pieces, 1-3 mm, 99%

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-016877

Silicon pieces, dia 1-3 mm, 99.99%

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-016878

Silicon pieces, dia 1-8 mm, 99.999%

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-017229

Synthesis

Silicon powder, - 70 + 170 mesh, 99.999%

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-016198

Silicon powder, -325 mesh, 99.9%

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-016199

Silicon powder, -325 mesh, 99.99%

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-016200

Synthesis

Silicon powder, -325 mesh, 99.999%

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-016201

Silicon powder, <40 μm, 99.9%

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-016204

Silicon powder, −200 mesh, 98%

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-016207

Silicon powder, −325 mesh, 99% trace metals basis

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-016208

Silicon powder, 98.5%

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-016202

Silicon powder, 99.95%

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-016203

Silicon powder, crystalline, -325 mesh, 99.5%

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-016205

Silicon powder, max. particle size 45 μm, 99.5%

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-016206

Silicon resin 1805

Cat. No.: VQ-015344

VQ-015344

Silicon rod, dia 2.5 cm, 99.9%

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-016594

Silicon rod, dia 25 mm, 99.99%

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-016595

Synthesis

Silicon spray, heavy duty

Cat. No.: VQ-015345

VQ-015345

Silicon sputtering target (with back plate), diam. x thickness 4 inch x 4 mm, 99.99%

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-017230

Silicon sputtering target, diam. × thickness 2 inch × 3 mm, 99.999%

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-017232

Silicon sputtering target, diam. × thickness 50 mm × 6 mm, 99.99%

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-017233

Silicon sputtering target, diam. x thickness 4 inch x 4 mm, 99.99%

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-017231

Silicon substrate (single side polished), P-type, diam. × thickness 1 in. × 300 - 400 μm

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018101

Silicon substrate (single side polished), P-type, diam. × thickness 2 in. × 300 - 400 μm

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018102

Silicon substrate, ± 0.5o

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018106

Silicon substrate, single side polished, 10 mm x 10 mm x 1 mm

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018103

Silicon substrate, single side polished, P-type, contains boron as dopant, diam. × thickness 25 mm × 1 mm

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018104

Silicon substrate, single side polished, P-type, contains boron as dopant, diam. × thickness 50 mm × 1 mm

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018105

Silicon tetraacetate, 99.00%

CAS: 562-90-3
Formula: C₈H₁₂O₈Si
MW: 264.26 g/mol

VQ-020643

Silicon wafer (double side polished), Intrinsic, dia x thickness 100 mm x 500 µm

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018107

Silicon wafer (double side polished), Intrinsic, dia x thickness 150 mm x 625 µm

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018108

Silicon wafer (single side polished), diam. × thickness 50.8 mm × 0.3 mm

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018109

Silicon wafer (single side polished), N (Phosphorous doped), diam. x thickness 50.8 mm x 280 μm

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018110

Silicon wafer (single side polished), N (Phosphorous doped), diam. x thickness 76 mm x 380 μm

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018111

Silicon wafer (single side polished), N-type, contains phosphorus as dopant, diam. x thickness 2 in. x 0.275 mm

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018112

Silicon wafer (single side polished), N-type, contains phosphorus as dopant, diam. x thickness 2 in. x 0.5 mm

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018113

Silicon wafer (single side polished), N-type, diam. x thickness 4 in x 0.525 mm

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018114

Silicon wafer (single side polished), P-type, contains boron as dopant, diam. × thickness 2 in. x 0.5 mm

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018116

Silicon wafer (single side polished), P-type, contains boron as dopant, diam. x thickness 2 in. x 0.5 mm

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018115

Silicon wafer (single side polished), P-type, diam. x thickness 2 in x 285 µm

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018299

Silicon wafer (single substrase), n-type, contains Arsenic as dopant, diam. × thickness 4 in. × 0.2 mm

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018300

Silicon wafer (single substrase), N-type, contains phosphorus (Ph) as dopant, diam. x thickness 100 mm x 0.525 mm

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018301

Silicon wafer (single substrase), n-type, contains Phosphorus as dopant, diam. × thickness 2 inch x 0.3 mm

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018302

Silicon wafer (single substrase), p-type, contains Boron (B) as dopant, diam. × thickness 2 in. × 0.1 mm

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018304

Silicon wafer (single substrase), p-type, contains Boron (B) as dopant, diam. x thickness 100 mm x 0.525 mm

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018303

Silicon wafer (single substrase), p-type, contains Boron (B) as dopant, size × thickness 125 mm × 125 mm × 0.2 mm

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018305

Silicon wafer (single substrase), p-type, contains Boron as dopant, diam. × thickness 2 inch x 0.3 mm

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018306

Silicon wafer, both side polished, N-type, single crystal, dia x thickness 2 in x 280 μm

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018117

Silicon wafer, both side polished, N-type, single crystal, dia x thickness 3 in x 500 μm

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018118

Laboratory Chemicals & Reagents View all

Solvents View all

Life Science & Biochemicals View all

APIs & Bulk Drugs View all

Impurities & Reference Standards View all

Pharma Intermediates & Building Blocks View all

Inorganic Chemicals, Metals & Advanced Materials View all

Industrial & Specialty Chemicals View all

Chemicals starting with “S”