Silicon wafer, p-type, contains Boron (B) as dopant, diam. x thickness 150 mm x 320 μm
- Cat. No.
- VQ-018307
VQ-018307
Silicon wafer, P-type, contains boron as dopant, diam. × thickness 100 mm x 525 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018120
Silicon wafer, P-type, contains boron as dopant, diam. × thickness 2 in x 250 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018121
Silicon wafer, P-type, contains boron as dopant, diam. × thickness 4 in x 525 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018122
Silicon wafer, P-type, contains boron as dopant, diam. × thickness 4 inch × 0.525mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018123
Silicon wafer, P/N-type semi insulating, diam. × thickness 3 in x 500-600 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018124
Silicon wafer, single crystal, dia x thickness 3 in x 0.1 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018125
Silicon wafer, single crystal, dia x thickness 3 in x 0.25 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018126
Silicon wafer, single crystal, single side polished, dia x thickness 100 mm x 500 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018127
Silicon wafer, single side polished, N-type, diam. x thickness 1 in. x 300-400 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018128
Silicon wafer, single side polished, P-type, diam. x thickness 1 in. x 300-400 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018129
Silicon wafers, N-type, dia 4 inch, thick 0.50 mm [Thermal oxide wafer 300 nm SiO2 layer on Si (100)]
- Cat. No.
- VQ-018130
VQ-018130
Silicon wafers, P-type, dia 4 inch, thick 0.525 mm [Thermal oxide wafer 100 nm SiO2 layer on Si (100)]
- Cat. No.
- VQ-018131
VQ-018131
Silicone carbide, ingot, N-type, diam. x thickness 2 in. x 10 mm
- CAS
- 409-21-2
- Formula
- CSi
- MW
- 40.1 g/mol
VQ-018413
Silicone carbide, ingot, N-type, diam. x thickness 3 in. x 15 mm
- CAS
- 409-21-2
- Formula
- CSi
- MW
- 40.1 g/mol
VQ-018414
Silicone carbide, ingot, Semi-insulating, diam. x thickness 3 in. x 10 mm
- CAS
- 409-21-2
- Formula
- CSi
- MW
- 40.1 g/mol
VQ-018415
Silver (Ag) ICP Standard Solution 1 gm/L in Diluted HNO3 traceable to NIST
- Cat. No.
- VQ-000262
VQ-000262
Silver (Ag) ICP Standard Solution 10 gm/L in Diluted HNO3 traceable to NIST
- Cat. No.
- VQ-000263
VQ-000263
Silver AAS standard solution 1000 mg/L Ag in diluted HNO₃ traceable to NIST
- Cat. No.
- VQ-000264
VQ-000264
Silver foil, 0.1 mm thick, 99% (33 mm width x 30 cm length)
- CAS
- 7440-22-4
- Formula
- Ag
- MW
- 107.87 g/mol
VQ-016421
Silver nanoparticle ink, 50 wt. %, dispersion in tripropylene glycol mono methyl ether
- MW
- 107.87 g/mol
- Cat. No.
- VQ-011582
VQ-011582
Silver nanopowder, APS (20-80) x (600-1200) x (600-1200) nm, 99.5%
- CAS
- 7440-22-4
- Formula
- Ag
- MW
- 107.87 g/mol
VQ-017378
Silver nanopowder, APS 30-50 nm, 99.9% (surface coated with 0.2 wt% PVP)
- CAS
- 7440-22-4
- Formula
- Ag
- MW
- 107.87 g/mol
VQ-017384
Silver nanopowder, APS 30-50 nm, 99.9%, (surface coated with 0.2 wt% oleic acid)
- CAS
- 7440-22-4
- Formula
- Ag
- MW
- 107.87 g/mol
VQ-017385