Chapter 90 · Chemical products
HSN code 9002 — chemicals list
92 products in our catalogue fall under HSN heading 9002. Eight-digit codes shown are indicative. Your customs broker confirms final classification.
9002 92
Silicon optical (mono crystalline) windows, 170 mm dia, 25 mm thick, 99.999%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018093
Silicon optical (mono crystalline) windows, 25 mm dia, 3 mm thick, 99.999%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018094
Silicon optical (mono crystalline) windows, 30 mm dia, 10 mm thick, 99.999%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018095
Silicon optical (mono crystalline) windows, 30 mm dia, 15 mm thick, 99.999%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018096
Silicon optical (mono crystalline) windows, 40 mm dia, 10 mm thick, 99.999%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018097
Silicon optical (mono crystalline) windows, 90 mm dia, 15 mm thick, 99.999%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018098
Silicon optical (mono crystalline) windows, 90 mm dia, 20 mm thick, 99.999%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018099
Silicon optical, mono crystalline, windows, 90 mm dia, 10 mm thick, 99.999%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018100
Silicon sputtering target, diam. x thickness 4 inch x 4 mm, 99.99%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-017231
Silicon wafer (double side polished), Intrinsic, dia x thickness 100 mm x 500 µm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018107
Silicon wafer (double side polished), Intrinsic, dia x thickness 150 mm x 625 µm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018108
Silicon wafer (single side polished), diam. × thickness 50.8 mm × 0.3 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018109
Silicon wafer (single side polished), N (Phosphorous doped), diam. x thickness 50.8 mm x 280 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018110
Silicon wafer (single side polished), N (Phosphorous doped), diam. x thickness 76 mm x 380 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018111
Silicon wafer (single side polished), N-type, contains phosphorus as dopant, diam. x thickness 2 in. x 0.275 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018112
Silicon wafer (single side polished), N-type, contains phosphorus as dopant, diam. x thickness 2 in. x 0.5 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018113
Silicon wafer (single side polished), N-type, diam. x thickness 4 in x 0.525 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018114
Silicon wafer (single side polished), P-type, contains boron as dopant, diam. × thickness 2 in. x 0.5 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018116
Silicon wafer (single side polished), P-type, contains boron as dopant, diam. x thickness 2 in. x 0.5 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018115
Silicon wafer, both side polished, N-type, single crystal, dia x thickness 2 in x 280 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018117
Silicon wafer, both side polished, N-type, single crystal, dia x thickness 3 in x 500 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018118
Silicon wafer, P-type, contains boron as dopant, diam. × thickness 2 in x 250 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018121
Silicon wafer, P-type, contains boron as dopant, diam. × thickness 4 in x 525 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018122
Silicon wafer, P/N-type semi insulating, diam. × thickness 3 in x 500-600 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018124
Silicon wafer, single crystal, dia x thickness 3 in x 0.1 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018125
Silicon wafer, single crystal, dia x thickness 3 in x 0.25 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018126
Silicon wafer, single crystal, single side polished, dia x thickness 100 mm x 500 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018127
