Magnesium oxide (single crystal substrate), ≥99.9% trace metals basis, L × W × thickness 10 mm × 10 mm × 1 mm
- CAS
- 1309-48-4
- Formula
- MgO
- MW
- 40.3 g/mol
VQ-018285
Inorganic Chemicals, Metals & Advanced Materials
Single Crystal Substrates & Wafers
Source 67 single crystal substrates & wafers for research, QC and production, documented with COA and SDS.
67products
COA + SDSwith every lot
Magnesium oxide, (single crystal substrate), 10 x 10 x 0.2 mm, Orientation
- CAS
- 1309-48-4
- Formula
- MgO
- MW
- 40.3 g/mol
VQ-018288
Magnesium oxide, (single crystal substrate), 10 x 10 x 0.5 mm, Orientation
- CAS
- 1309-48-4
- Formula
- MgO
- MW
- 40.3 g/mol
VQ-018289
Magnesium oxide, (single crystal substrate), 10 x 10 x 0.5 mm, Orientation, 99.99%
- CAS
- 1309-48-4
- Formula
- MgO
- MW
- 40.3 g/mol
VQ-018290
Magnesium oxide, (single crystal substrate), 10 x 10 x 1.0 mm, Orientation: +/-0.3degree
- CAS
- 1309-48-4
- Formula
- MgO
- MW
- 40.3 g/mol
VQ-018291
Silicon carbide (4H-SiC Epitaxial Wafer) wafers, dia 101 mm, thick 0.35 mm
- CAS
- 409-21-2
- Formula
- CSi
- MW
- 40.1 g/mol
VQ-018294
Silicon carbide (4H-SiC) wafers, dia 76.2 mm, thick 0.35 mm
- CAS
- 409-21-2
- Formula
- CSi
- MW
- 40.1 g/mol
VQ-018297
Silicon carbide substrates (N-Type SiC), dimensions. × thickness 10 x 10 mm × 0.3 mm
- CAS
- 409-21-2
- Formula
- CSi
- MW
- 40.1 g/mol
VQ-018298
Silicon wafer (single side polished), P-type, diam. x thickness 2 in x 285 µm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018299
Silicon wafer (single substrase), n-type, contains Arsenic as dopant, diam. × thickness 4 in. × 0.2 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018300
Silicon wafer (single substrase), N-type, contains phosphorus (Ph) as dopant, diam. x thickness 100 mm x 0.525 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018301
Silicon wafer (single substrase), n-type, contains Phosphorus as dopant, diam. × thickness 2 inch x 0.3 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018302
Silicon wafer (single substrase), p-type, contains Boron (B) as dopant, diam. × thickness 2 in. × 0.1 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018304
Silicon wafer (single substrase), p-type, contains Boron (B) as dopant, diam. x thickness 100 mm x 0.525 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018303
Silicon wafer (single substrase), p-type, contains Boron (B) as dopant, size × thickness 125 mm × 125 mm × 0.2 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018305
Silicon wafer (single substrase), p-type, contains Boron as dopant, diam. × thickness 2 inch x 0.3 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018306
Silicon wafer, p-type, contains Boron (B) as dopant, diam. x thickness 150 mm x 320 μm
- Cat. No.
- VQ-018307
VQ-018307
Single crystal sapphire substrates L × W × thickness 25 mm × 25 mm × 0.5 mm
- Cat. No.
- VQ-018308
VQ-018308
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