CAS Registry Number
CAS 7440-21-3 — Silicon granules 3-6 mm 99.99%
We list 77 grades / variants of this substance. Compare them below and add the right one to your quote basket.
CAS No.7440-21-3
FormulaSi
Mol. weight28.09
Also known as: Silicon 3-6 mm
IUPAC: silicon
Available grades of CAS 7440-21-3
Silicon optical (mono crystalline) windows, 170 mm dia, 25 mm thick, 99.999%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018093
Silicon optical (mono crystalline) windows, 25 mm dia, 3 mm thick, 99.999%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018094
Silicon optical (mono crystalline) windows, 30 mm dia, 10 mm thick, 99.999%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018095
Silicon optical (mono crystalline) windows, 30 mm dia, 15 mm thick, 99.999%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018096
Silicon optical (mono crystalline) windows, 40 mm dia, 10 mm thick, 99.999%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018097
Silicon optical (mono crystalline) windows, 90 mm dia, 15 mm thick, 99.999%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018098
Silicon optical (mono crystalline) windows, 90 mm dia, 20 mm thick, 99.999%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018099
Silicon optical, mono crystalline, windows, 90 mm dia, 10 mm thick, 99.999%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018100
Silicon sputtering target (with back plate), diam. x thickness 4 inch x 4 mm, 99.99%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-017230
Silicon sputtering target, diam. × thickness 2 inch × 3 mm, 99.999%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-017232
Silicon sputtering target, diam. × thickness 50 mm × 6 mm, 99.99%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-017233
Silicon sputtering target, diam. x thickness 4 inch x 4 mm, 99.99%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-017231
Silicon substrate (single side polished), P-type, diam. × thickness 1 in. × 300 - 400 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018101
Silicon substrate (single side polished), P-type, diam. × thickness 2 in. × 300 - 400 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018102
Silicon substrate, single side polished, 10 mm x 10 mm x 1 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018103
Silicon substrate, single side polished, P-type, contains boron as dopant, diam. × thickness 25 mm × 1 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018104
Silicon substrate, single side polished, P-type, contains boron as dopant, diam. × thickness 50 mm × 1 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018105
Silicon wafer (double side polished), Intrinsic, dia x thickness 100 mm x 500 µm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018107
Silicon wafer (double side polished), Intrinsic, dia x thickness 150 mm x 625 µm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018108
Silicon wafer (single side polished), diam. × thickness 50.8 mm × 0.3 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018109
Silicon wafer (single side polished), N (Phosphorous doped), diam. x thickness 50.8 mm x 280 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018110
Silicon wafer (single side polished), N (Phosphorous doped), diam. x thickness 76 mm x 380 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018111
Silicon wafer (single side polished), N-type, contains phosphorus as dopant, diam. x thickness 2 in. x 0.275 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018112
Silicon wafer (single side polished), N-type, contains phosphorus as dopant, diam. x thickness 2 in. x 0.5 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018113
Silicon wafer (single side polished), N-type, diam. x thickness 4 in x 0.525 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018114
Silicon wafer (single side polished), P-type, contains boron as dopant, diam. × thickness 2 in. x 0.5 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018116
Silicon wafer (single side polished), P-type, contains boron as dopant, diam. x thickness 2 in. x 0.5 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018115
Silicon wafer (single side polished), P-type, diam. x thickness 2 in x 285 µm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018299
Silicon wafer (single substrase), n-type, contains Arsenic as dopant, diam. × thickness 4 in. × 0.2 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018300
Silicon wafer (single substrase), N-type, contains phosphorus (Ph) as dopant, diam. x thickness 100 mm x 0.525 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018301
Silicon wafer (single substrase), n-type, contains Phosphorus as dopant, diam. × thickness 2 inch x 0.3 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018302
Silicon wafer (single substrase), p-type, contains Boron (B) as dopant, diam. × thickness 2 in. × 0.1 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018304
Silicon wafer (single substrase), p-type, contains Boron (B) as dopant, diam. x thickness 100 mm x 0.525 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018303
Silicon wafer (single substrase), p-type, contains Boron (B) as dopant, size × thickness 125 mm × 125 mm × 0.2 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018305
Silicon wafer (single substrase), p-type, contains Boron as dopant, diam. × thickness 2 inch x 0.3 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018306
Silicon wafer, both side polished, N-type, single crystal, dia x thickness 2 in x 280 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018117
Silicon wafer, both side polished, N-type, single crystal, dia x thickness 3 in x 500 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018118
Silicon wafer, P-type, contains boron as dopant, diam. × thickness 100 mm x 525 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018120
Silicon wafer, P-type, contains boron as dopant, diam. × thickness 2 in x 250 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018121
Silicon wafer, P-type, contains boron as dopant, diam. × thickness 4 in x 525 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018122
Silicon wafer, P-type, contains boron as dopant, diam. × thickness 4 inch × 0.525mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018123
Silicon wafer, P/N-type semi insulating, diam. × thickness 3 in x 500-600 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018124
Silicon wafer, single crystal, dia x thickness 3 in x 0.1 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018125
Silicon wafer, single crystal, dia x thickness 3 in x 0.25 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018126
Silicon wafer, single crystal, single side polished, dia x thickness 100 mm x 500 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018127
Silicon wafer, single side polished, N-type, diam. x thickness 1 in. x 300-400 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018128
Silicon wafer, single side polished, P-type, diam. x thickness 1 in. x 300-400 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018129
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