Chapter 90 · Chemical products

HSN code 9001 — chemicals list

159 products in our catalogue fall under HSN heading 9001. Eight-digit codes shown are indicative. Your customs broker confirms final classification.

Quartz substrate, thickness 1.0 mm, size 15 × 15 mm

Cat. No.: VQ-018079

VQ-018079

Quartz substrates (Dimension: ~ 3" × 1" × 1.1 mm)

Cat. No.: VQ-018080

VQ-018080

Quartz substrates thick 0.5 mm, size 10 mm × 10 mm

Cat. No.: VQ-018081

VQ-018081

Quartz substrates thick 0.5 mm, size 25.4 mm × 25.4 mm

Cat. No.: VQ-018082

VQ-018082

Quartz window, dia x thickness 20 mm × 2.5 mm

Cat. No.: VQ-018083

VQ-018083

Right angle prism, 15 mm

Cat. No.: VQ-017973

VQ-017973

Right angle prism, 16 mm

Cat. No.: VQ-017974

VQ-017974

Right angle prism, 25 mm

Cat. No.: VQ-017975

VQ-017975

Right angle prism, 40 mm

Cat. No.: VQ-017976

VQ-017976

Right angle prism, 50 mm

Cat. No.: VQ-017977

VQ-017977

Samarium cobalt alloy, sputtering target, diam. x thickness 50.8 mm x 1 mm (1:5%)

Cat. No.: VQ-017217

VQ-017217

Sapphire substrate, 10 mm x 10 mm, thick 0.5 mm {C-axis (0001)}

Cat. No.: VQ-018085

VQ-018085

Sapphire substrate, diam. x thickness 4 in x 0.65 mm

Cat. No.: VQ-018086

VQ-018086

Synthesis

Sapphire substrates, L × W × thickness 10 mm × 10 mm × 0.5 mm

Cat. No.: VQ-018293

VQ-018293

Sapphire Wafer, C-plane (0001), diam. x thickness 4 inch x 0.65 mm

Cat. No.: VQ-018087

VQ-018087

Sapphire wafer, R-plane (1-102), L × W × thickness 10 mm × 10 mm × 0.5 mm

Cat. No.: VQ-018088

VQ-018088

SI wafers, P-type, dia 4 inch, thick 0.525 mm [Thermal oxide wafer 300 nm SiO2 layer on Si (100)]

Cat. No.: VQ-018090

VQ-018090

Spectroscopy

Silica substrates fused, UV grade, 25 mm dia, 1 mm thick

Cat. No.: VQ-018091

VQ-018091

Spectroscopy

Silica substrates fused, UV grade, 50 mm dia, 2 mm thick

Cat. No.: VQ-018092

VQ-018092

Silicon carbide (4H-SiC Epitaxial Wafer) wafers, dia 101 mm, thick 0.35 mm

CAS: 409-21-2
Formula: CSi
MW: 40.1 g/mol

VQ-018294

Silicon carbide (4H-SiC) wafers, dia 100 mm, thick 1.0 mm

CAS: 409-21-2
Formula: CSi
MW: 40.1 g/mol

VQ-018295

Silicon carbide (4H-SiC) wafers, dia 100 mm, thick 1.5 mm

CAS: 409-21-2
Formula: CSi
MW: 40.1 g/mol

VQ-018296

Silicon carbide (4H-SiC) wafers, dia 76.2 mm, thick 0.35 mm

CAS: 409-21-2
Formula: CSi
MW: 40.1 g/mol

VQ-018297

Silicon substrate (single side polished), P-type, diam. × thickness 1 in. × 300 - 400 μm

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018101

Silicon substrate (single side polished), P-type, diam. × thickness 2 in. × 300 - 400 μm

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018102

Silicon substrate, single side polished, 10 mm x 10 mm x 1 mm

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018103

Silicon wafer (single substrase), n-type, contains Arsenic as dopant, diam. × thickness 4 in. × 0.2 mm

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018300

Silicon wafer (single substrase), N-type, contains phosphorus (Ph) as dopant, diam. x thickness 100 mm x 0.525 mm

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018301

Silicon wafer (single substrase), n-type, contains Phosphorus as dopant, diam. × thickness 2 inch x 0.3 mm

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018302

Silicon wafer (single substrase), p-type, contains Boron (B) as dopant, diam. × thickness 2 in. × 0.1 mm

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018304

Silicon wafer (single substrase), p-type, contains Boron (B) as dopant, diam. x thickness 100 mm x 0.525 mm

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018303

Silicon wafer (single substrase), p-type, contains Boron (B) as dopant, size × thickness 125 mm × 125 mm × 0.2 mm

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018305

Silicon wafer (single substrase), p-type, contains Boron as dopant, diam. × thickness 2 inch x 0.3 mm

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018306

Silicon wafer, p-type, contains Boron (B) as dopant, diam. x thickness 150 mm x 320 μm

Cat. No.: VQ-018307

VQ-018307

Silicon wafer, P-type, contains boron as dopant, diam. × thickness 4 inch × 0.525mm

CAS: 7440-21-3
Formula: Si
MW: 28.09 g/mol

VQ-018123

Silicon wafers, N-type, dia 4 inch, thick 0.50 mm [Thermal oxide wafer 300 nm SiO2 layer on Si (100)]

Cat. No.: VQ-018130

VQ-018130

Silicon wafers, P-type, dia 4 inch, thick 0.525 mm [Thermal oxide wafer 100 nm SiO2 layer on Si (100)]

Cat. No.: VQ-018131

VQ-018131

SOI wafer, Dia 6" inch

Cat. No.: VQ-018134

VQ-018134

SOI wafers, 6 Inch, Dia 150 mm, P-type, Boron Doped

Cat. No.: VQ-018135

VQ-018135

Strontium titanium oxide substrate, 10 mm x 10 mm x 0.5 mm, polished one side, orientation, 99.99%

CAS: 12060-59-2
Formula: O₃SrTi
MW: 183.49 g/mol

VQ-018311

Strontium titanium oxide substrate, 10 mm x 10 mm x 5 mm

CAS: 12060-59-2
Formula: O₃SrTi
MW: 183.49 g/mol

VQ-018312

Strontium titanium oxide substrate, L × W × thickness 10 mm × 10 mm × 0.5 mm

CAS: 12060-59-2
Formula: O₃SrTi
MW: 183.49 g/mol

VQ-018313

Strontium titanium oxide wafer, diam. × thickness 1 in x 0.5 mm

CAS: 12060-59-2
Formula: O₃SrTi
MW: 183.49 g/mol

VQ-018314

Substrate Glass Wafers (100 mm x 100 mm x 0.2 mm)

Cat. No.: VQ-018136

VQ-018136

Super achromatic half wave plate

Cat. No.: VQ-018238

VQ-018238

Yttrium aluminium garnet, single crystals, 10 mm x 10 mm x 0.5 mm, 99.99%

Formula: Y₃Al₅O₁₂

VQ-018240

Yttrium aluminium perovskite, single crystals, 10 mm x 10 mm x 0.5 mm, 99.99%

Formula: YAlO₃

VQ-018241

Yttrium-Stabilized Zirconia single crystal substrates, 10mm x 10mm x 0.5mm

Cat. No.: VQ-018324

VQ-018324

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HSN code 9001 — chemicals list