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Inorganic Chemicals, Metals & Advanced Materials
Inorganic salts, high-purity metals and oxides, rare earth compounds, catalysts precursors and materials for labs, electronics and industry.
5,224products
6sub-categories
10in stock
COA + SDSwith every lot
Inorganic Compounds & Salts 2,555Metals & Alloys 1,265Nanomaterials 582Crystal Optics & Photonics 387Materials Science 283Metal Catalysts & Ligands 152
Silicon sputtering target (with back plate), diam. x thickness 4 inch x 4 mm, 99.99%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-017230
Silicon sputtering target, diam. × thickness 2 inch × 3 mm, 99.999%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-017232
Silicon sputtering target, diam. × thickness 50 mm × 6 mm, 99.99%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-017233
Silicon sputtering target, diam. x thickness 4 inch x 4 mm, 99.99%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-017231
Silicon substrate (single side polished), P-type, diam. × thickness 1 in. × 300 - 400 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018101
Silicon substrate (single side polished), P-type, diam. × thickness 2 in. × 300 - 400 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018102
Silicon substrate, single side polished, 10 mm x 10 mm x 1 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018103
Silicon substrate, single side polished, P-type, contains boron as dopant, diam. × thickness 25 mm × 1 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018104
Silicon substrate, single side polished, P-type, contains boron as dopant, diam. × thickness 50 mm × 1 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018105
Silicon wafer (double side polished), Intrinsic, dia x thickness 100 mm x 500 µm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018107
Silicon wafer (double side polished), Intrinsic, dia x thickness 150 mm x 625 µm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018108
Silicon wafer (single side polished), diam. × thickness 50.8 mm × 0.3 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018109
Silicon wafer (single side polished), N (Phosphorous doped), diam. x thickness 50.8 mm x 280 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018110
Silicon wafer (single side polished), N (Phosphorous doped), diam. x thickness 76 mm x 380 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018111
Silicon wafer (single side polished), N-type, contains phosphorus as dopant, diam. x thickness 2 in. x 0.275 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018112
Silicon wafer (single side polished), N-type, contains phosphorus as dopant, diam. x thickness 2 in. x 0.5 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018113
Silicon wafer (single side polished), N-type, diam. x thickness 4 in x 0.525 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018114
Silicon wafer (single side polished), P-type, contains boron as dopant, diam. × thickness 2 in. x 0.5 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018116
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