Silicon wafer (single side polished), P-type, contains boron as dopant, diam. x thickness 2 in. x 0.5 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018115
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Inorganic Chemicals, Metals & Advanced Materials
Inorganic salts, high-purity metals and oxides, rare earth compounds, catalysts precursors and materials for labs, electronics and industry.
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Inorganic Compounds & Salts 2,555Metals & Alloys 1,265Nanomaterials 582Crystal Optics & Photonics 387Materials Science 283Metal Catalysts & Ligands 152
Silicon wafer (single side polished), P-type, diam. x thickness 2 in x 285 µm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018299
Silicon wafer (single substrase), n-type, contains Arsenic as dopant, diam. × thickness 4 in. × 0.2 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018300
Silicon wafer (single substrase), N-type, contains phosphorus (Ph) as dopant, diam. x thickness 100 mm x 0.525 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018301
Silicon wafer (single substrase), n-type, contains Phosphorus as dopant, diam. × thickness 2 inch x 0.3 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018302
Silicon wafer (single substrase), p-type, contains Boron (B) as dopant, diam. × thickness 2 in. × 0.1 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018304
Silicon wafer (single substrase), p-type, contains Boron (B) as dopant, diam. x thickness 100 mm x 0.525 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018303
Silicon wafer (single substrase), p-type, contains Boron (B) as dopant, size × thickness 125 mm × 125 mm × 0.2 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018305
Silicon wafer (single substrase), p-type, contains Boron as dopant, diam. × thickness 2 inch x 0.3 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018306
Silicon wafer, both side polished, N-type, single crystal, dia x thickness 2 in x 280 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018117
Silicon wafer, both side polished, N-type, single crystal, dia x thickness 3 in x 500 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018118
Silicon wafer, p-type, contains Boron (B) as dopant, diam. x thickness 150 mm x 320 μm
- Cat. No.
- VQ-018307
VQ-018307
Silicon wafer, P-type, contains boron as dopant, diam. × thickness 100 mm x 525 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018120
Silicon wafer, P-type, contains boron as dopant, diam. × thickness 2 in x 250 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018121
Silicon wafer, P-type, contains boron as dopant, diam. × thickness 4 in x 525 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018122
Silicon wafer, P-type, contains boron as dopant, diam. × thickness 4 inch × 0.525mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018123
Silicon wafer, P/N-type semi insulating, diam. × thickness 3 in x 500-600 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018124
Silicon wafer, single crystal, dia x thickness 3 in x 0.1 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018125
Silicon wafer, single crystal, dia x thickness 3 in x 0.25 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018126
Silicon wafer, single crystal, single side polished, dia x thickness 100 mm x 500 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018127
Silicon wafer, single side polished, N-type, diam. x thickness 1 in. x 300-400 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018128
Silicon wafer, single side polished, P-type, diam. x thickness 1 in. x 300-400 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
VQ-018129
![Silicon wafers, N-type, dia 4 inch, thick 0.50 mm [Thermal oxide wafer 300 nm SiO2 layer on Si (100)]](/media/pack/silicon-wafers-n-type-dia-4-inch-thick-0-50-mm-thermal-oxide-wafer-300-nm-sio2-layer-on.svg?v=3)
Silicon wafers, N-type, dia 4 inch, thick 0.50 mm [Thermal oxide wafer 300 nm SiO2 layer on Si (100)]
- Cat. No.
- VQ-018130
VQ-018130
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